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Bipolar Transistors - BJT
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ZXTP25020DZTA
ZXTP25020DZTA
Part Number:
ZXTP25020DZTA
SKU:
128260
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 20V HIGH GAIN
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
33267 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 25 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 195 mV
Maximum DC Collector Current
- 5 A
Power Dissipation
2.4 W
Gain Bandwidth Product fT
290 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP250
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
300 at 10 mA, 2 V, 200 at 1 A, 2 V, 45 at 5 A, 2 V
DC Current Gain hFE Max
300
Height
1.6 mm
Length
4.6 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
2.6 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541290075
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ZXTP25020DZTA
Bipolar Transistors - BJT
ZXTP25020DZTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-89-3
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 20 V
Collector- Base Voltage VCBO
- 25 V
Emitter- Base Voltage VEBO
- 7 V
Collector-Emitter Saturation Voltage
- 195 mV
Maximum DC Collector Current
- 5 A
Power Dissipation
2.4 W
Gain Bandwidth Product fT
290 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP250
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
300 at 10 mA, 2 V, 200 at 1 A, 2 V, 45 at 5 A, 2 V
DC Current Gain hFE Max
300
Height
1.6 mm
Length
4.6 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
2.6 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.001834 oz
USHTS
8541290075
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