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Bipolar Transistors - BJT
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ZXTP5401GTA
ZXTP5401GTA
Part Number:
ZXTP5401GTA
SKU:
269240
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 150V 2A
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
15981 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-223-4
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 150 V
Collector- Base Voltage VCBO
- 160 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 70 mV
Maximum DC Collector Current
- 600 mA
Power Dissipation
2 W
Gain Bandwidth Product fT
100 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP5401
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
50 at 1 mA, 5 V, 60 at 10 mA, 5 V, 50 at 50 mA, 5 V
DC Current Gain hFE Max
50
Height
1.65 mm
Length
6.7 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
3.7 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.003951 oz
USHTS
8541290075
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ZXTP5401GTA
Bipolar Transistors - BJT
ZXTP5401GTA
Diodes Incorporated
Products specifications
Manufacturer(MFG)
Diodes Incorporated
Part Category
Bipolar Transistors - BJT
RoHS
RoHS Compliance
Mounting Type Style
SMD/SMT
Package Shape
SOT-223-4
Transistor Polarity
PNP
Configuration
Single
Collector- Emitter Voltage VCEO Max
- 150 V
Collector- Base Voltage VCBO
- 160 V
Emitter- Base Voltage VEBO
- 5 V
Collector-Emitter Saturation Voltage
- 70 mV
Maximum DC Collector Current
- 600 mA
Power Dissipation
2 W
Gain Bandwidth Product fT
100 MHz
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Series
ZXTP5401
Package Style
Reel
Brand
Diodes Incorporated
DC Collector/Base Gain hfe Min
50 at 1 mA, 5 V, 60 at 10 mA, 5 V, 50 at 50 mA, 5 V
DC Current Gain hFE Max
50
Height
1.65 mm
Length
6.7 mm
Product Type
BJTs - Bipolar Transistors
Standard Pack Quantity
1000
Product Group
Transistors
Material
Silicon
Width
3.7 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.003951 oz
USHTS
8541290075
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