2N6788

Picture of 2N6788

Part Number: 2N6788

SKU: 210823

Manufacturer: Infineon / IR

Description: MOSFET

Rohs State: Need to verify

Data Sheet: Download Datasheets

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Availability: 53328 in stock

Delivery Date: 4-7 days

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Specifications
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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package/Case	TO-205AF-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	6 A
Rds On - Drain-Source Resistance	345 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Operating Temperature(Min)	- 55 C
Power Dissipation	20 W
Channel Mode	Enhancement
Brand	Infineon / IR
Configuration	Single
Fall Time	70 ns (Max)
Height	4.54 mm
Length	8.3 mm
Product Type	MOSFET
Rise Time	70 ns (Max)
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	40 ns (Max)
Typical Turn-On Delay Time	40 ns (Max)
Width	8.3 mm
CNHTS	8541290000
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package/Case	TO-205AF-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	6 A
Rds On - Drain-Source Resistance	345 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Operating Temperature(Min)	- 55 C
Power Dissipation	20 W
Channel Mode	Enhancement
Brand	Infineon / IR
Configuration	Single
Fall Time	70 ns (Max)
Height	4.54 mm
Length	8.3 mm
Product Type	MOSFET
Rise Time	70 ns (Max)
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	40 ns (Max)
Typical Turn-On Delay Time	40 ns (Max)
Width	8.3 mm
CNHTS	8541290000
USHTS	8541290095

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