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ams
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Semiconductors
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MOSFET
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2N6794
2N6794
Part Number:
2N6794
SKU:
118226
Manufacturer:
Infineon / IR
Description:
MOSFET
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
77597 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-205AF-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
1.5 A
Rds On - Drain-Source Resistance
3.1 Ohms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Operating Temperature(Min)
- 55 C
Power Dissipation
20 W
Channel Mode
Enhancement
Brand
Infineon / IR
Configuration
Single
Fall Time
30 ns (Max)
Height
4.54 mm
Length
8.3 mm
Product Type
MOSFET
Rise Time
30 ns (Max)
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
60 ns (Max)
Typical Turn-On Delay Time
40 ns (Max)
Width
8.3 mm
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.229281 oz
USHTS
8541290095
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2N6794
Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-205AF-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
500 V
Id - Continuous Drain Current
1.5 A
Rds On - Drain-Source Resistance
3.1 Ohms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Operating Temperature(Min)
- 55 C
Power Dissipation
20 W
Channel Mode
Enhancement
Brand
Infineon / IR
Configuration
Single
Fall Time
30 ns (Max)
Height
4.54 mm
Length
8.3 mm
Product Type
MOSFET
Rise Time
30 ns (Max)
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
60 ns (Max)
Typical Turn-On Delay Time
40 ns (Max)
Width
8.3 mm
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.229281 oz
USHTS
8541290095
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