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2N6851

Part Number: 2N6851
SKU: 57276
Manufacturer: Infineon / IR
Description: MOSFET
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 7194 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-205AF-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 4 A
Rds On - Drain-Source Resistance 1.68 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Power Dissipation 25 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 80 ns (Max)
Height 4.54 mm
Length 8.3 mm
Product Type MOSFET
Rise Time 100 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 100 ns (Max)
Typical Turn-On Delay Time 50 ns (Max)
Width 8.3 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.229281 oz
USHTS 8541290095
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  • 2N6851 Infineon / IR
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-205AF-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 4 A
Rds On - Drain-Source Resistance 1.68 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Power Dissipation 25 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 80 ns (Max)
Height 4.54 mm
Length 8.3 mm
Product Type MOSFET
Rise Time 100 ns
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 100 ns (Max)
Typical Turn-On Delay Time 50 ns (Max)
Width 8.3 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.229281 oz
USHTS 8541290095
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