AUIRF1010EZS

Part Number: AUIRF1010EZS

SKU: 141908

Manufacturer: Infineon / IR

Description: MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms

Rohs State: Need to verify

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Availability: 51119 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
RoHS	RoHS Compliance
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	84 A
Rds On - Drain-Source Resistance	8.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	86 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 175 C
Power Dissipation	140 W
Channel Mode	Enhancement
Qualification Standard	AEC-Q101
Package Style	Tube
Brand	Infineon / IR
Configuration	Single
Fall Time	54 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	90 ns
Standard Pack Quantity	1000
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	19 ns
Width	9.25 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.139332 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
RoHS	RoHS Compliance
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	TO-263-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	84 A
Rds On - Drain-Source Resistance	8.5 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	86 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 175 C
Power Dissipation	140 W
Channel Mode	Enhancement
Qualification Standard	AEC-Q101
Package Style	Tube
Brand	Infineon / IR
Configuration	Single
Fall Time	54 ns
Height	4.4 mm
Length	10 mm
Product Type	MOSFET
Rise Time	90 ns
Standard Pack Quantity	1000
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	19 ns
Width	9.25 mm
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.139332 oz
USHTS	8541290095

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