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Part Number: AUIRF1324WL
SKU: 50789
Manufacturer: Infineon / IR
Description: MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 30663 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-262-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 24 V
Id - Continuous Drain Current 382 A
Rds On - Drain-Source Resistance 1.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 120 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 300 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 110 ns
Forward Transconductance - Min 210 S
Height 9.45 mm
Length 10.2 mm
Product Type MOSFET
Rise Time 200 ns
Standard Pack Quantity 50
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 75 ns
Typical Turn-On Delay Time 18 ns
Width 4.5 mm
MACRO NEO Part Number AUIRF1324WL SP001516588
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.084199 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-262-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 24 V
Id - Continuous Drain Current 382 A
Rds On - Drain-Source Resistance 1.3 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 120 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 300 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 110 ns
Forward Transconductance - Min 210 S
Height 9.45 mm
Length 10.2 mm
Product Type MOSFET
Rise Time 200 ns
Standard Pack Quantity 50
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 75 ns
Typical Turn-On Delay Time 18 ns
Width 4.5 mm
MACRO NEO Part Number AUIRF1324WL SP001516588
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.084199 oz
USHTS 8541290095
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