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AUIRF1324WL
AUIRF1324WL
Part Number:
AUIRF1324WL
SKU:
50789
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
30663 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-262-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
24 V
Id - Continuous Drain Current
382 A
Rds On - Drain-Source Resistance
1.3 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
120 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
300 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
110 ns
Forward Transconductance - Min
210 S
Height
9.45 mm
Length
10.2 mm
Product Type
MOSFET
Rise Time
200 ns
Standard Pack Quantity
50
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
18 ns
Width
4.5 mm
MACRO NEO Part Number
AUIRF1324WL SP001516588
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.084199 oz
USHTS
8541290095
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Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-262-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
24 V
Id - Continuous Drain Current
382 A
Rds On - Drain-Source Resistance
1.3 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
120 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
300 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
110 ns
Forward Transconductance - Min
210 S
Height
9.45 mm
Length
10.2 mm
Product Type
MOSFET
Rise Time
200 ns
Standard Pack Quantity
50
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
75 ns
Typical Turn-On Delay Time
18 ns
Width
4.5 mm
MACRO NEO Part Number
AUIRF1324WL SP001516588
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.084199 oz
USHTS
8541290095
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