Search
Part Number: AUIRF1404S
SKU: 202007
Manufacturer: Infineon / IR
Description: MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 57535 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 162 A
Rds On - Drain-Source Resistance 4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 200 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 200 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 26 ns
Forward Transconductance - Min 106 S
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 140 ns
Standard Pack Quantity 50
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 17 ns
Width 6.22 mm
MACRO NEO Part Number AUIRF1404S SP001522616
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 162 A
Rds On - Drain-Source Resistance 4 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 200 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 200 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 26 ns
Forward Transconductance - Min 106 S
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 140 ns
Standard Pack Quantity 50
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 17 ns
Width 6.22 mm
MACRO NEO Part Number AUIRF1404S SP001522616
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Filters
Sort
display