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AUIRF1405ZS-7P

Part Number: AUIRF1405ZS-7P
SKU: 203572
Manufacturer: Infineon / IR
Description: MOSFET MOSFET_)40V 60V)
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 24676 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-263-7
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 150 A
Rds On - Drain-Source Resistance 3.7 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 230 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 230 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 130 ns
Forward Transconductance - Min 108 S
Height 4.4 mm
Length 10 mm
Product Type MOSFET
Rise Time 140 ns
Standard Pack Quantity 50
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 170 ns
Typical Turn-On Delay Time 16 ns
Width 9.25 mm
MACRO NEO Part Number AUIRF1405ZS-7P SP001518538
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.056438 oz
USHTS 8541290095
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  • AUIRF1405ZS-7P Infineon / IR
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-263-7
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 150 A
Rds On - Drain-Source Resistance 3.7 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 230 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 230 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 130 ns
Forward Transconductance - Min 108 S
Height 4.4 mm
Length 10 mm
Product Type MOSFET
Rise Time 140 ns
Standard Pack Quantity 50
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 170 ns
Typical Turn-On Delay Time 16 ns
Width 9.25 mm
MACRO NEO Part Number AUIRF1405ZS-7P SP001518538
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.056438 oz
USHTS 8541290095
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