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AUIRF2804L
AUIRF2804L
Part Number:
AUIRF2804L
SKU:
208866
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
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Availability:
40250 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-262-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
270 A
Rds On - Drain-Source Resistance
2.3 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
240 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
300 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
130 ns
Forward Transconductance - Min
130 S
Height
9.45 mm
Length
10.2 mm
Product Type
MOSFET
Rise Time
120 ns
Standard Pack Quantity
50
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
13 ns
Width
4.5 mm
MACRO NEO Part Number
AUIRF2804L SP001522590
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
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AUIRF2804L
Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-262-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
270 A
Rds On - Drain-Source Resistance
2.3 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
240 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
300 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
130 ns
Forward Transconductance - Min
130 S
Height
9.45 mm
Length
10.2 mm
Product Type
MOSFET
Rise Time
120 ns
Standard Pack Quantity
50
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
13 ns
Width
4.5 mm
MACRO NEO Part Number
AUIRF2804L SP001522590
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
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