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Semiconductors
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AUIRF6215
AUIRF6215
Part Number:
AUIRF6215
SKU:
141910
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms
Rohs State:
Need to verify
Free Sample Request:
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Availability:
66724 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-220-3
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
13 A
Rds On - Drain-Source Resistance
580 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
66 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
110 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
37 ns
Forward Transconductance - Min
3.6 S
Height
15.65 mm
Length
10 mm
Product Type
MOSFET
Rise Time
36 ns
Standard Pack Quantity
50
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
53 ns
Typical Turn-On Delay Time
14 ns
Width
4.4 mm
MACRO NEO Part Number
AUIRF6215 SP001521586
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.068784 oz
USHTS
8541290095
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Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-220-3
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
150 V
Id - Continuous Drain Current
13 A
Rds On - Drain-Source Resistance
580 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
66 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
110 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
37 ns
Forward Transconductance - Min
3.6 S
Height
15.65 mm
Length
10 mm
Product Type
MOSFET
Rise Time
36 ns
Standard Pack Quantity
50
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
53 ns
Typical Turn-On Delay Time
14 ns
Width
4.4 mm
MACRO NEO Part Number
AUIRF6215 SP001521586
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.068784 oz
USHTS
8541290095
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