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Part Number: AUIRF7103QTR
SKU: 213971
Manufacturer: Infineon / IR
Description: MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 45965 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 10 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 2.4 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Reel
Brand Infineon / IR
Configuration Dual
Fall Time 2.3 ns
Forward Transconductance - Min 3.4 S
Height 1.75 mm
Length 4.9 mm
Product Type MOSFET
Rise Time 1.7 ns
Standard Pack Quantity 4000
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 5.1 ns
Width 3.9 mm
MACRO NEO Part Number AUIRF7103QTR SP001517980
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.019048 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape SOIC-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 50 V
Id - Continuous Drain Current 3 A
Rds On - Drain-Source Resistance 200 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 10 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 2.4 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Reel
Brand Infineon / IR
Configuration Dual
Fall Time 2.3 ns
Forward Transconductance - Min 3.4 S
Height 1.75 mm
Length 4.9 mm
Product Type MOSFET
Rise Time 1.7 ns
Standard Pack Quantity 4000
Product Group MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 15 ns
Typical Turn-On Delay Time 5.1 ns
Width 3.9 mm
MACRO NEO Part Number AUIRF7103QTR SP001517980
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.019048 oz
USHTS 8541290095
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