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AUIRF7669L2TR

Part Number: AUIRF7669L2TR
SKU: 10502
Manufacturer: Infineon / IR
Description: MOSFET 100V AUTO GRADE 1 N-CH HEXFET
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 83481 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape DirectFET-L8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 114 A
Rds On - Drain-Source Resistance 3.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 120 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 100 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Reel
Brand Infineon / IR
Configuration Single
Fall Time 14 ns
Forward Transconductance - Min 90 S
Height 0.74 mm
Length 9.15 mm
Product Type MOSFET
Rise Time 30 ns
Standard Pack Quantity 4000
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 27 ns
Typical Turn-On Delay Time 15 ns
Width 7.1 mm
MACRO NEO Part Number AUIRF7669L2TR SP001519182
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.006227 oz
USHTS 8541290095
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape DirectFET-L8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 114 A
Rds On - Drain-Source Resistance 3.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 120 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 100 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Reel
Brand Infineon / IR
Configuration Single
Fall Time 14 ns
Forward Transconductance - Min 90 S
Height 0.74 mm
Length 9.15 mm
Product Type MOSFET
Rise Time 30 ns
Standard Pack Quantity 4000
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 27 ns
Typical Turn-On Delay Time 15 ns
Width 7.1 mm
MACRO NEO Part Number AUIRF7669L2TR SP001519182
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.006227 oz
USHTS 8541290095
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