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Part Number: AUIRF9Z34N
SKU: 131970
Manufacturer: Infineon / IR
Description: MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 16469 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 19 A
Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 23.3 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 68 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 41 ns
Height 15.65 mm
Length 10 mm
Product Type MOSFET
Rise Time 55 ns
Standard Pack Quantity 1000
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 13 ns
Width 4.4 mm
MACRO NEO Part Number SP001521042
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.068784 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-220-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 19 A
Rds On - Drain-Source Resistance 100 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 23.3 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 68 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 41 ns
Height 15.65 mm
Length 10 mm
Product Type MOSFET
Rise Time 55 ns
Standard Pack Quantity 1000
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 30 ns
Typical Turn-On Delay Time 13 ns
Width 4.4 mm
MACRO NEO Part Number SP001521042
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.068784 oz
USHTS 8541290095
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