US Dollar
Euro
Register
Log in
Wishlist
0
Shopping cart
0
0
You have no items in your shopping cart.
Menu
Search
Personal menu
Wishlist
0
Shopping cart
0
Close
Home Page
Products
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
Contact Us
About Us
Menu
Home Page
Products
Close
Back
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
Close
Back
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
View All
Contact Us
About Us
Home
/
Semiconductors
/
Discrete Semiconductors
/
Transistors
/
MOSFET
/
AUIRFB3207
AUIRFB3207
Part Number:
AUIRFB3207
SKU:
131971
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 75V 1 N-CH HEXFET 7mOhms
Rohs State:
Need to verify
Free Sample Request:
Request Free Samples
Request For AUIRFB3207
Please log in to request free sample.
Availability:
71810 in stock
Delivery Date:
4-7 days
Call for pricing
Share
facebook
twitter
pinterest
google+
Specifications
Contact Us
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-220-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
75 V
Id - Continuous Drain Current
170 A
Rds On - Drain-Source Resistance
9 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Qg - Gate Charge
180 nC
Operating Temperature(Min)
- 55 C
Power Dissipation
300 W
Channel Mode
Enhancement
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
74 ns
Height
15.65 mm
Length
10 mm
Product Type
MOSFET
Rise Time
120 ns
Standard Pack Quantity
1000
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
68 ns
Typical Turn-On Delay Time
29 ns
Width
4.4 mm
MACRO NEO Part Number
SP001519144
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.068784 oz
USHTS
8541290095
Your name
Your email
Enquiry
Product Related Search
AUIRFB3207
Price
AUIR Series
AUIRFB3207
Datasheet
AUIRFB3207
Application
AUIRFB3207
Pdf
AUIRFB3207
Pinout
AUIRFB3207
Image
AUIRFB3207
Picture
AUIRFB3207
In Stock
AUIRFB3207
Distributor
AUIRFB3207
MOSFET
AUIRFB3207
Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-220-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
75 V
Id - Continuous Drain Current
170 A
Rds On - Drain-Source Resistance
9 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Qg - Gate Charge
180 nC
Operating Temperature(Min)
- 55 C
Power Dissipation
300 W
Channel Mode
Enhancement
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
74 ns
Height
15.65 mm
Length
10 mm
Product Type
MOSFET
Rise Time
120 ns
Standard Pack Quantity
1000
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
68 ns
Typical Turn-On Delay Time
29 ns
Width
4.4 mm
MACRO NEO Part Number
SP001519144
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.068784 oz
USHTS
8541290095
Filters
Sort
display