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Semiconductors
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MOSFET
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AUIRFP2907
AUIRFP2907
Part Number:
AUIRFP2907
SKU:
71197
Manufacturer:
Infineon / IR
Description:
MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms
Rohs State:
Need to verify
Free Sample Request:
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Availability:
19497 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-247-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
75 V
Id - Continuous Drain Current
209 A
Rds On - Drain-Source Resistance
4.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
410 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
470 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
130 ns
Height
20.7 mm
Length
15.87 mm
Product Type
MOSFET
Rise Time
190 ns
Standard Pack Quantity
400
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
23 ns
Width
5.31 mm
MACRO NEO Part Number
SP001516710
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.211644 oz
USHTS
8541290095
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Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-247-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
75 V
Id - Continuous Drain Current
209 A
Rds On - Drain-Source Resistance
4.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
410 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
470 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
130 ns
Height
20.7 mm
Length
15.87 mm
Product Type
MOSFET
Rise Time
190 ns
Standard Pack Quantity
400
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
23 ns
Width
5.31 mm
MACRO NEO Part Number
SP001516710
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.211644 oz
USHTS
8541290095
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