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Semiconductors
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MOSFET
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AUIRFP4110
AUIRFP4110
Part Number:
AUIRFP4110
SKU:
71196
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFET_(75V 120V(
Rohs State:
Need to verify
Free Sample Request:
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Availability:
57649 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-247-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
120 A
Rds On - Drain-Source Resistance
3.7 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
210 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
370 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
88 ns
Forward Transconductance - Min
160 S
Height
20.7 mm
Length
15.87 mm
Product Type
MOSFET
Rise Time
67 ns
Standard Pack Quantity
25
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
78 ns
Typical Turn-On Delay Time
25 ns
Width
5.31 mm
MACRO NEO Part Number
AUIRFP4110 SP001517386
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.211644 oz
USHTS
8541290095
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AUIRFP4110
Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
TO-247-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
100 V
Id - Continuous Drain Current
120 A
Rds On - Drain-Source Resistance
3.7 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
210 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 175 C
Power Dissipation
370 W
Channel Mode
Enhancement
Qualification Standard
AEC-Q101
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
88 ns
Forward Transconductance - Min
160 S
Height
20.7 mm
Length
15.87 mm
Product Type
MOSFET
Rise Time
67 ns
Standard Pack Quantity
25
Product Group
MOSFETs
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
78 ns
Typical Turn-On Delay Time
25 ns
Width
5.31 mm
MACRO NEO Part Number
AUIRFP4110 SP001517386
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.211644 oz
USHTS
8541290095
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