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Part Number: AUIRFR6215
SKU: 10507
Manufacturer: Infineon / IR
Description: MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 24453 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 13 A
Rds On - Drain-Source Resistance 580 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 66 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 110 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 37 ns
Forward Transconductance - Min 3.6 S
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 36 ns
Standard Pack Quantity 75
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 53 ns
Typical Turn-On Delay Time 14 ns
Width 6.22 mm
MACRO NEO Part Number AUIRFR6215 SP001517590
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TO-252-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 13 A
Rds On - Drain-Source Resistance 580 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 66 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 175 C
Power Dissipation 110 W
Channel Mode Enhancement
Qualification Standard AEC-Q101
Package Style Tube
Brand Infineon / IR
Configuration Single
Fall Time 37 ns
Forward Transconductance - Min 3.6 S
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 36 ns
Standard Pack Quantity 75
Product Group MOSFETs
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 53 ns
Typical Turn-On Delay Time 14 ns
Width 6.22 mm
MACRO NEO Part Number AUIRFR6215 SP001517590
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.011640 oz
USHTS 8541290095
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