0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

JANSR2N7391

Part Number: JANSR2N7391
SKU: 179691
Manufacturer: Infineon / IR
Description: MOSFET
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 74771 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-254-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 22 A
Rds On - Drain-Source Resistance 210 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Power Dissipation 250 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 72 ns
Height 13.84 mm
Length 13.84 mm
Product Type MOSFET
Rise Time 97 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 120 ns
Typical Turn-On Delay Time 28 ns
Width 6.6 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011993 oz
USHTS 8541290095
  • JANSR2N7391 Price
  • JANS Series
  • JANSR2N7391 Datasheet
  • JANSR2N7391 Application
  • JANSR2N7391 Pdf
  • JANSR2N7391 Pinout
  • JANSR2N7391 Image
  • JANSR2N7391 Picture
  • JANSR2N7391 In Stock
  • JANSR2N7391 Distributor
  • JANSR2N7391 MOSFET
  • JANSR2N7391 Infineon / IR
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-254-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 22 A
Rds On - Drain-Source Resistance 210 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Power Dissipation 250 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 72 ns
Height 13.84 mm
Length 13.84 mm
Product Type MOSFET
Rise Time 97 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 120 ns
Typical Turn-On Delay Time 28 ns
Width 6.6 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011993 oz
USHTS 8541290095
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display