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JANSR2N7476T1

Part Number: JANSR2N7476T1
SKU: 38077
Manufacturer: Infineon / IR
Description: MOSFET
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 26512 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-254-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 45 A
Rds On - Drain-Source Resistance 44 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Power Dissipation 208 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 50 ns
Height 13.84 mm
Length 13.84 mm
Product Type MOSFET
Rise Time 125 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 80 ns
Typical Turn-On Delay Time 35 ns
Width 6.6 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011993 oz
USHTS 8541290095
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  • JANSR2N7476T1 MOSFET
  • JANSR2N7476T1 Infineon / IR
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
Material Silicon
Mounting Type Style Through Hole
Package Shape TO-254-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V
Id - Continuous Drain Current 45 A
Rds On - Drain-Source Resistance 44 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 125 C
Power Dissipation 208 W
Channel Mode Enhancement
Brand Infineon / IR
Configuration Single
Fall Time 50 ns
Height 13.84 mm
Length 13.84 mm
Product Type MOSFET
Rise Time 125 ns
Product Group MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 80 ns
Typical Turn-On Delay Time 35 ns
Width 6.6 mm
CNHTS 8541290000
TARIC 8541290000
Per Pcs Weight 0.011993 oz
USHTS 8541290095
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