JANTX2N6766

Part Number: JANTX2N6766

SKU: 286222

Manufacturer: Infineon / IR

Description: MOSFET

Rohs State: Need to verify

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Availability: 706 in stock

Delivery Date: 4-7 days

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Specifications
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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-204AA-2
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	30 A
Rds On - Drain-Source Resistance	90 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	150 W
Channel Mode	Enhancement
Tradename	StrongIRFET
Brand	Infineon / IR
Configuration	Single
Fall Time	130 ns
Height	7.74 mm
Length	39.37 mm
Product Type	MOSFET
Rise Time	190 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	170 ns
Typical Turn-On Delay Time	35 ns
Width	25.53 mm
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.229281 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
Material	Silicon
Mounting Type Style	Through Hole
Package Shape	TO-204AA-2
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	30 A
Rds On - Drain-Source Resistance	90 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	150 W
Channel Mode	Enhancement
Tradename	StrongIRFET
Brand	Infineon / IR
Configuration	Single
Fall Time	130 ns
Height	7.74 mm
Length	39.37 mm
Product Type	MOSFET
Rise Time	190 ns
Product Group	MOSFETs
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	170 ns
Typical Turn-On Delay Time	35 ns
Width	25.53 mm
CNHTS	8541290000
TARIC	8541290000
Per Pcs Weight	0.229281 oz
USHTS	8541290095

JANTX2N6766

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