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ams
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MOSFET
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SI3443DV
SI3443DV
Part Number:
SI3443DV
SKU:
146570
Manufacturer:
Infineon / IR
Description:
MOSFET
Rohs State:
Need to verify
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Availability:
20143 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
TSOP-6
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
4.4 A
Rds On - Drain-Source Resistance
65 mOhms
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
2 W
Channel Mode
Enhancement
Brand
Infineon / IR
Configuration
Single
Fall Time
72 ns
Height
1.1 mm
Length
3 mm
Product Type
MOSFET
Rise Time
33 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
12 ns
Width
1.5 mm
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.000705 oz
USHTS
8541290095
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SI3443DV
Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
TSOP-6
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
4.4 A
Rds On - Drain-Source Resistance
65 mOhms
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
2 W
Channel Mode
Enhancement
Brand
Infineon / IR
Configuration
Single
Fall Time
72 ns
Height
1.1 mm
Length
3 mm
Product Type
MOSFET
Rise Time
33 ns
Product Group
MOSFETs
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
12 ns
Width
1.5 mm
CNHTS
8541290000
TARIC
8541290000
Per Pcs Weight
0.000705 oz
USHTS
8541290095
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