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SI3443DVTRPBF

Part Number: SI3443DVTRPBF
SKU: 65676
Manufacturer: Infineon / IR
Description: MOSFET 20V 1 N-CH HEXFET 65mOhms 11nC
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 43629 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TSOP-6
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.4 A
Rds On - Drain-Source Resistance 65 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Qg - Gate Charge 11 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Package Style Reel
Brand Infineon / IR
Configuration Single
Fall Time 72 ns
Height 1.1 mm
Length 3 mm
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 33 ns
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 1 P-Channel
Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 12 ns
Width 1.5 mm
MACRO NEO Part Number SP001563096
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000705 oz
USHTS 8541290095
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  • SI3443DVTRPBF Infineon / IR
Products specifications
Manufacturer(MFG) Infineon
Part Category MOSFET
RoHS RoHS Compliance
Material Silicon
Mounting Type Style SMD/SMT
Package Shape TSOP-6
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.4 A
Rds On - Drain-Source Resistance 65 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V
Qg - Gate Charge 11 nC
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Power Dissipation 2 W
Channel Mode Enhancement
Package Style Reel
Brand Infineon / IR
Configuration Single
Fall Time 72 ns
Height 1.1 mm
Length 3 mm
Moisture Sensitive Yes
Product Type MOSFET
Rise Time 33 ns
Standard Pack Quantity 3000
Product Group MOSFETs
Transistor Type 1 P-Channel
Type HEXFET Power MOSFET
Typical Turn-Off Delay Time 70 ns
Typical Turn-On Delay Time 12 ns
Width 1.5 mm
MACRO NEO Part Number SP001563096
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000705 oz
USHTS 8541290095
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