SI4410DYPBF

Part Number: SI4410DYPBF

SKU: 150220

Manufacturer: Infineon / IR

Description: MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC

Rohs State: Need to verify

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Availability: 92264 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
RoHS	RoHS Compliance
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SOIC-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	30 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	2.5 W
Channel Mode	Enhancement
Package Style	Tube
Brand	Infineon / IR
Configuration	Single
Fall Time	44 ns
Forward Transconductance - Min	35 S
Height	1.75 mm
Length	4.9 mm
Product Type	MOSFET
Rise Time	7.7 ns
Standard Pack Quantity	3800
Product Group	MOSFETs
Transistor Type	1 N-Channel
Type	HEXFET Power MOSFET
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	11 ns
Width	3.9 mm
MACRO NEO Part Number	SP001563080
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.019048 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	MOSFET
RoHS	RoHS Compliance
Material	Silicon
Mounting Type Style	SMD/SMT
Package Shape	SOIC-8
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	20 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	30 nC
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Power Dissipation	2.5 W
Channel Mode	Enhancement
Package Style	Tube
Brand	Infineon / IR
Configuration	Single
Fall Time	44 ns
Forward Transconductance - Min	35 S
Height	1.75 mm
Length	4.9 mm
Product Type	MOSFET
Rise Time	7.7 ns
Standard Pack Quantity	3800
Product Group	MOSFETs
Transistor Type	1 N-Channel
Type	HEXFET Power MOSFET
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	11 ns
Width	3.9 mm
MACRO NEO Part Number	SP001563080
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.019048 oz
USHTS	8541290095

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