US Dollar
Euro
Register
Log in
Wishlist
0
Shopping cart
0
0
You have no items in your shopping cart.
Menu
Search
Personal menu
Wishlist
0
Shopping cart
0
Close
Home Page
Products
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
Contact Us
About Us
Menu
Home Page
Products
Close
Back
Passive Components
Optoelectronics
Connectors
Wire & Cable
Power
Circuit Protection
Tools & Supplies
Semiconductors
Opto-electronics
Electromechanical
Enclosures
Embedded Solutions
Thermal Management
Sensors
Test & Measurement
Manufacturers
Close
Back
3M
Adesto Technologies
Alpha Wire
Amphenol
Amphenol Advanced Sensors
Amphenol Commercial Products
Amphenol FCI
ams
Anaren
Antenova
Apex Microtechnology
Artesyn Embedded Technologies
View All
Contact Us
About Us
Home
/
Semiconductors
/
Discrete Semiconductors
/
Transistors
/
MOSFET
/
SI4435DYPBF
SI4435DYPBF
Part Number:
SI4435DYPBF
SKU:
140038
Manufacturer:
Infineon / IR
Description:
MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC
Rohs State:
Need to verify
Free Sample Request:
Request Free Samples
Request For SI4435DYPBF
Please log in to request free sample.
Availability:
50944 in stock
Delivery Date:
4-7 days
Call for pricing
Share
facebook
twitter
pinterest
google+
Specifications
Contact Us
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
SOIC-8
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
8 A
Rds On - Drain-Source Resistance
20 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Qg - Gate Charge
40 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
2.5 W
Channel Mode
Enhancement
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
31 ns
Height
1.75 mm
Length
4.9 mm
Product Type
MOSFET
Rise Time
17 ns
Standard Pack Quantity
95
Product Group
MOSFETs
Transistor Type
1 P-Channel
Type
HEXFET Power MOSFET
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
16 ns
Width
3.9 mm
MACRO NEO Part Number
SP001569846
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.019048 oz
USHTS
8541290095
Your name
Your email
Enquiry
Product Related Search
SI4435DYPBF
Price
SI44 Series
SI4435DYPBF
Datasheet
SI4435DYPBF
Application
SI4435DYPBF
Pdf
SI4435DYPBF
Pinout
SI4435DYPBF
Image
SI4435DYPBF
Picture
SI4435DYPBF
In Stock
SI4435DYPBF
Distributor
SI4435DYPBF
MOSFET
SI4435DYPBF
Infineon / IR
Products specifications
Manufacturer(MFG)
Infineon
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
SMD/SMT
Package Shape
SOIC-8
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
8 A
Rds On - Drain-Source Resistance
20 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Qg - Gate Charge
40 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
2.5 W
Channel Mode
Enhancement
Package Style
Tube
Brand
Infineon / IR
Configuration
Single
Fall Time
31 ns
Height
1.75 mm
Length
4.9 mm
Product Type
MOSFET
Rise Time
17 ns
Standard Pack Quantity
95
Product Group
MOSFETs
Transistor Type
1 P-Channel
Type
HEXFET Power MOSFET
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
16 ns
Width
3.9 mm
MACRO NEO Part Number
SP001569846
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.019048 oz
USHTS
8541290095
Filters
Sort
display