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Part Number: BF 1005SR E6327
SKU: 10794
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 9V
Rohs State: Need to verify
Data Sheet: Download Datasheets
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Availability: 23469 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 8 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-143
Package Style Reel
Brand Infineon Technologies
Configuration Single Dual Gate
Height 1 mm
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 3 V
Width 1.3 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number BF1005SRE6327XT
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 8 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-143
Package Style Reel
Brand Infineon Technologies
Configuration Single Dual Gate
Height 1 mm
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 3 V
Width 1.3 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number BF1005SRE6327XT
USHTS 8541290095
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