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BF 1009S E6327

Part Number: BF 1009S E6327
SKU: 304869
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode
Rohs State: Need to verify
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Availability: 66456 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 12 V
Output Power 200 mW
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-143
Package Style Reel
Brand Infineon Technologies
Configuration Single Dual Gate
Forward Transconductance - Min 26 mS
Height 1 mm
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF1009
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 8 V, 10 V
Width 1.3 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number SP000010955 BF1009SE6327HTSA1
USHTS 8541210075
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 12 V
Output Power 200 mW
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-143
Package Style Reel
Brand Infineon Technologies
Configuration Single Dual Gate
Forward Transconductance - Min 26 mS
Height 1 mm
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF1009
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 8 V, 10 V
Width 1.3 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number SP000010955 BF1009SE6327HTSA1
USHTS 8541210075
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