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Part Number: BF 1009SR E6327
SKU: 202304
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V
Rohs State: Need to verify
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Availability: 23402 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-143
Package Style Reel
Brand Infineon Technologies
Configuration Single Dual Gate
Height 1 mm
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF1009
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Width 1.3 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number SP000010956 BF1009SRE6327HTSA1
USHTS 8541290095
Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-143
Package Style Reel
Brand Infineon Technologies
Configuration Single Dual Gate
Height 1 mm
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF1009
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Width 1.3 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number SP000010956 BF1009SRE6327HTSA1
USHTS 8541290095
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