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BF 2030W H6814

Part Number: BF 2030W H6814
SKU: 212534
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors RF MOSFETS
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 56192 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 40 mA
Vds - Drain-Source Breakdown Voltage 10 V
Operating Frequency 1 GHz
Gain 23 dB
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-343
Package Style Reel
Brand Infineon Technologies
Configuration Single
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF2030
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 6 V
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 40 mA
Vds - Drain-Source Breakdown Voltage 10 V
Operating Frequency 1 GHz
Gain 23 dB
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-343
Package Style Reel
Brand Infineon Technologies
Configuration Single
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF2030
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 6 V
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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