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Part Number: BF 999 E6433
SKU: 182427
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors Silicon N-Ch MOSFET Triode
Rohs State: Need to verify
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Availability: 70982 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 30 mA
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 300 MHz
Gain 27 dB
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-23
Package Style Reel
Brand Infineon Technologies
Configuration Single
Height 1 mm (Max)
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF999
Standard Pack Quantity 10000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 6.5 V
Width 1.3 mm
MACRO NEO Part Number SP000426300 BF999E6433HTMA1
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541210075
Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 30 mA
Vds - Drain-Source Breakdown Voltage 20 V
Operating Frequency 300 MHz
Gain 27 dB
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-23
Package Style Reel
Brand Infineon Technologies
Configuration Single
Height 1 mm (Max)
Length 2.9 mm
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BF999
Standard Pack Quantity 10000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 6.5 V
Width 1.3 mm
MACRO NEO Part Number SP000426300 BF999E6433HTMA1
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000282 oz
USHTS 8541210075
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