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BG 3123 H6327

Part Number: BG 3123 H6327
SKU: 202320
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors RF MOSFETS
Rohs State: Need to verify
Data Sheet: Download Datasheets
Free Sample Request: Request Free Samples
Availability: 87758 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Frequency 800 MHz
Gain 25 dB
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-363
Package Style Reel
Brand Infineon Technologies
Configuration Dual
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BG3123
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 6 V
MACRO NEO Part Number SP000753490 BG3123H6327XTSA1
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000212 oz
USHTS 8541290095
  • BG 3123 H6327 Price
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  • BG 3123 H6327 RF MOSFET Transistors
  • BG 3123 H6327 Infineon Technologies
Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 25 mA
Vds - Drain-Source Breakdown Voltage 12 V
Operating Frequency 800 MHz
Gain 25 dB
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape SOT-363
Package Style Reel
Brand Infineon Technologies
Configuration Dual
Power Dissipation 200 mW
Product Type RF MOSFET Transistors
Series BG3123
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 6 V
MACRO NEO Part Number SP000753490 BG3123H6327XTSA1
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.000212 oz
USHTS 8541290095
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