BG 3230 E6327

Part Number: BG 3230 E6327

SKU: 202321

Manufacturer: Infineon Technologies

Description: RF MOSFET Transistors DUAL N-Channel MOSFET Tetrode 5V

Rohs State: Need to verify

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Availability: 18682 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	25 mA
Vds - Drain-Source Breakdown Voltage	8 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	SOT-363
Package Style	Reel
Brand	Infineon Technologies
Channel Mode	Depletion
Configuration	Dual
Height	0.9 mm
Length	2 mm
Power Dissipation	200 mW
Product Type	RF MOSFET Transistors
Standard Pack Quantity	3000
Product Group	MOSFETs
Type	RF Small Signal MOSFET
Vgs - Gate-Source Voltage	6 V
Width	1.25 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
ECCN	EAR99
Per Pcs Weight	0.000212 oz
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	25 mA
Vds - Drain-Source Breakdown Voltage	8 V
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	SOT-363
Package Style	Reel
Brand	Infineon Technologies
Channel Mode	Depletion
Configuration	Dual
Height	0.9 mm
Length	2 mm
Power Dissipation	200 mW
Product Type	RF MOSFET Transistors
Standard Pack Quantity	3000
Product Group	MOSFETs
Type	RF Small Signal MOSFET
Vgs - Gate-Source Voltage	6 V
Width	1.25 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
ECCN	EAR99
Per Pcs Weight	0.000212 oz
USHTS	8541290095

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