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ams
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BG 5130R E6327
BG 5130R E6327
Part Number:
BG 5130R E6327
SKU:
101955
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors DUAL - N-Channel MOSFET Tetrode
Rohs State:
Need to verify
Free Sample Request:
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Availability:
69257 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Infineon
Part Category
RF MOSFET Transistors
RoHS
RoHS Compliance
Transistor Polarity
N-Channel
Material
Silicon
Id - Continuous Drain Current
25 mA
Vds - Drain-Source Breakdown Voltage
8 V
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Mounting Type Style
SMD/SMT
Package Shape
SOT-363
Package Style
Reel
Brand
Infineon Technologies
Configuration
Dual
Height
0.9 mm
Length
2 mm
Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Standard Pack Quantity
3000
Product Group
MOSFETs
Type
RF Small Signal MOSFET
Vgs - Gate-Source Voltage
6 V
Width
1.25 mm
CNHTS
8541290000
CAHTS
8541290000
TARIC
8541290000
ECCN
EAR99
Per Pcs Weight
0.000212 oz
USHTS
8541290095
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BG 5130R E6327
RF MOSFET Transistors
BG 5130R E6327
Infineon Technologies
Products specifications
Manufacturer(MFG)
Infineon
Part Category
RF MOSFET Transistors
RoHS
RoHS Compliance
Transistor Polarity
N-Channel
Material
Silicon
Id - Continuous Drain Current
25 mA
Vds - Drain-Source Breakdown Voltage
8 V
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Mounting Type Style
SMD/SMT
Package Shape
SOT-363
Package Style
Reel
Brand
Infineon Technologies
Configuration
Dual
Height
0.9 mm
Length
2 mm
Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Standard Pack Quantity
3000
Product Group
MOSFETs
Type
RF Small Signal MOSFET
Vgs - Gate-Source Voltage
6 V
Width
1.25 mm
CNHTS
8541290000
CAHTS
8541290000
TARIC
8541290000
ECCN
EAR99
Per Pcs Weight
0.000212 oz
USHTS
8541290095
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