PTF140451E V1

Part Number: PTF140451E V1

SKU: 115783

Manufacturer: Infineon Technologies

Description: RF MOSFET Transistors RFP-LDMOS GLDMOS3&7

Rohs State: Need to verify

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Availability: 38758 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	550 mA
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	70 mOhms
Operating Frequency	1.45 GHz to 1.55 GHz
Gain	18 dB
Output Power	45 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	H-30265
Package Style	Tray
Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Single
Height	4.11 mm
Length	34.04 mm
Power Dissipation	175 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	1
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	12 V
Width	13.72 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
MACRO NEO Part Number	SP000102183 F140451EV1XP
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	550 mA
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	70 mOhms
Operating Frequency	1.45 GHz to 1.55 GHz
Gain	18 dB
Output Power	45 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	H-30265
Package Style	Tray
Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Single
Height	4.11 mm
Length	34.04 mm
Power Dissipation	175 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	1
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	12 V
Width	13.72 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
MACRO NEO Part Number	SP000102183 F140451EV1XP
USHTS	8541290075

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