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Part Number: PTF180101S V1
SKU: 105816
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors Hi Pwr RF LDMOS FET 10W 1805-1880 MHz
Rohs State: Need to verify
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Availability: 88827 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 830 mOhms
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 200 C
Mounting Type Style SMD/SMT
Package Style Reel
Brand Infineon Technologies
Channel Mode Enhancement
Configuration Single
Power Dissipation 58 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V to 12 V
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number SP000009989 F180101SV1XT
USHTS 8541290075
Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 830 mOhms
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 200 C
Mounting Type Style SMD/SMT
Package Style Reel
Brand Infineon Technologies
Channel Mode Enhancement
Configuration Single
Power Dissipation 58 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V to 12 V
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
MACRO NEO Part Number SP000009989 F180101SV1XT
USHTS 8541290075
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