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PTF240101S V1

Part Number: PTF240101S V1
SKU: 244137
Manufacturer: Infineon Technologies
Description: RF MOSFET Transistors Hi Pwr RF LDMOS FET 10 W 2400-2700 MHz
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 9222 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 830 mOhms
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 200 C
Mounting Type Style SMD/SMT
Package Style Reel
Brand Infineon Technologies
Channel Mode Enhancement
Configuration Single
Power Dissipation 58 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V to 12 V
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN 5A991
MACRO NEO Part Number SP000082764 F240101SV1XT
USHTS 8541290075
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  • PTF240101S V1 RF MOSFET Transistors
  • PTF240101S V1 Infineon Technologies
Products specifications
Manufacturer(MFG) Infineon
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 830 mOhms
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 200 C
Mounting Type Style SMD/SMT
Package Style Reel
Brand Infineon Technologies
Channel Mode Enhancement
Configuration Single
Power Dissipation 58 W
Product Type RF MOSFET Transistors
Standard Pack Quantity 500
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage - 0.5 V to 12 V
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
MXHTS 85412999
ECCN 5A991
MACRO NEO Part Number SP000082764 F240101SV1XT
USHTS 8541290075
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