PTFA043002E V1

Part Number: PTFA043002E V1

SKU: 28645

Manufacturer: Infineon Technologies

Description: RF MOSFET Transistors RFP-LDMOS GOLDMOS 8

Rohs State: Need to verify

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Availability: 35055 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	1.55 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	80 mOhms
Operating Frequency	470 MHz to 860 MHz
Gain	16 dB
Output Power	300 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	H-30275-4
Package Style	Tray
Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Dual
Height	4.55 mm
Length	41.15 mm
Power Dissipation	761 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	1
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	12 V
Width	10.16 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
MACRO NEO Part Number	FA043002EV1XP
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	Infineon
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	1.55 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	80 mOhms
Operating Frequency	470 MHz to 860 MHz
Gain	16 dB
Output Power	300 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	H-30275-4
Package Style	Tray
Brand	Infineon Technologies
Channel Mode	Enhancement
Configuration	Dual
Height	4.55 mm
Length	41.15 mm
Power Dissipation	761 W
Product Type	RF MOSFET Transistors
Standard Pack Quantity	1
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	12 V
Width	10.16 mm
CNHTS	8541290000
CAHTS	8541290000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
MACRO NEO Part Number	FA043002EV1XP
USHTS	8541290075

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