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APT28M120B2
APT28M120B2
Part Number:
APT28M120B2
SKU:
20408
Manufacturer:
Microchip / Microsemi
Description:
MOSFET FG, MOSFET, 1200V, TO-247 T-MAX
Rohs State:
Need to verify
Data Sheet:
Download Datasheets
Free Sample Request:
Request Free Samples
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Availability:
99632 in stock
Delivery Date:
4-7 days
Call for pricing
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Specifications
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Products specifications
Manufacturer(MFG)
Microchip
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
T-MAX-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
1.2 kV
Id - Continuous Drain Current
29 A
Rds On - Drain-Source Resistance
530 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
300 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.135 kW
Channel Mode
Enhancement
Package Style
Tube
Brand
Microchip / Microsemi
Configuration
Single
Fall Time
48 ns
Forward Transconductance - Min
31 S
Height
21.46 mm
Length
16.26 mm
Product Type
MOSFET
Rise Time
31 ns
Standard Pack Quantity
1
Product Group
MOSFETs
Typical Turn-Off Delay Time
170 ns
Typical Turn-On Delay Time
50 ns
Width
5.31 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.208116 oz
USHTS
8541290095
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APT28M120B2
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APT28M120B2
Microchip / Microsemi
Products specifications
Manufacturer(MFG)
Microchip
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
T-MAX-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
1.2 kV
Id - Continuous Drain Current
29 A
Rds On - Drain-Source Resistance
530 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
300 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.135 kW
Channel Mode
Enhancement
Package Style
Tube
Brand
Microchip / Microsemi
Configuration
Single
Fall Time
48 ns
Forward Transconductance - Min
31 S
Height
21.46 mm
Length
16.26 mm
Product Type
MOSFET
Rise Time
31 ns
Standard Pack Quantity
1
Product Group
MOSFETs
Typical Turn-Off Delay Time
170 ns
Typical Turn-On Delay Time
50 ns
Width
5.31 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.208116 oz
USHTS
8541290095
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