APT35GP120B2D2G

Part Number: APT35GP120B2D2G

SKU: 191833

Manufacturer: Microchip / Microsemi

Description: IGBT Transistors IGBT PT MOS 7 Combi 1200 V 35 A TO-247 MAX

Rohs State: Need to verify

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Availability: 3503 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	Microchip
Part Category	IGBT Transistors
RoHS	RoHS Compliance
Package Shape	TO-247-3
Mounting Type Style	Through Hole
Configuration	Single
Collector- Emitter Voltage VCEO Max	1200 V
Maximum Gate Emitter Voltage	30 V
Continuous Collector Current at 25 C	96 A
Power Dissipation	543 W
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Package Style	Bulk
Brand	Microchip / Microsemi
Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors
Standard Pack Quantity	1
TARIC	8541290000
Product Group	IGBTs
USHTS	8541290095

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Products specifications

Manufacturer(MFG)	Microchip
Part Category	IGBT Transistors
RoHS	RoHS Compliance
Package Shape	TO-247-3
Mounting Type Style	Through Hole
Configuration	Single
Collector- Emitter Voltage VCEO Max	1200 V
Maximum Gate Emitter Voltage	30 V
Continuous Collector Current at 25 C	96 A
Power Dissipation	543 W
Operating Temperature(Min)	- 55 C
Operating Temperature(Max)	+ 150 C
Package Style	Bulk
Brand	Microchip / Microsemi
Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors
Standard Pack Quantity	1
TARIC	8541290000
Product Group	IGBTs
USHTS	8541290095

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