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Semiconductors
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APT66M60B2
APT66M60B2
Part Number:
APT66M60B2
SKU:
121619
Manufacturer:
Microchip / Microsemi
Description:
MOSFET FG, MOSFET, 600V, TO-247 T-MAX
Rohs State:
Need to verify
Free Sample Request:
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Availability:
15282 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
Microchip
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
T-MAX-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
70 A
Rds On - Drain-Source Resistance
75 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
330 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.135 kW
Channel Mode
Enhancement
Tradename
Power MOS 8
Package Style
Tube
Brand
Microchip / Microsemi
Configuration
Single
Fall Time
70 ns
Forward Transconductance - Min
65 S
Height
5.31 mm
Length
21.46 mm
Product Type
MOSFET
Rise Time
85 ns
Standard Pack Quantity
1
Product Group
MOSFETs
Typical Turn-Off Delay Time
225 ns
Typical Turn-On Delay Time
75 ns
Width
16.26 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.208116 oz
USHTS
8541290095
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APT66M60B2
MOSFET
APT66M60B2
Microchip / Microsemi
Products specifications
Manufacturer(MFG)
Microchip
Part Category
MOSFET
RoHS
RoHS Compliance
Material
Silicon
Mounting Type Style
Through Hole
Package Shape
T-MAX-3
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
600 V
Id - Continuous Drain Current
70 A
Rds On - Drain-Source Resistance
75 mOhms
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
330 nC
Operating Temperature(Min)
- 55 C
Operating Temperature(Max)
+ 150 C
Power Dissipation
1.135 kW
Channel Mode
Enhancement
Tradename
Power MOS 8
Package Style
Tube
Brand
Microchip / Microsemi
Configuration
Single
Fall Time
70 ns
Forward Transconductance - Min
65 S
Height
5.31 mm
Length
21.46 mm
Product Type
MOSFET
Rise Time
85 ns
Standard Pack Quantity
1
Product Group
MOSFETs
Typical Turn-Off Delay Time
225 ns
Typical Turn-On Delay Time
75 ns
Width
16.26 mm
CNHTS
8541290000
CAHTS
8541290000
JPHTS
8541290100
KRHTS
8541299000
TARIC
8541290000
MXHTS
85412999
ECCN
EAR99
Per Pcs Weight
0.208116 oz
USHTS
8541290095
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