Search
Part Number: APT77N60JC3
SKU: 27394
Manufacturer: Microchip / Microsemi
Description: Discrete Semiconductor Modules FG, MOSFET, 600V, 77 AMPS, SOT-227
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 35789 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) Microchip
Part Category Discrete Semiconductor Modules
RoHS RoHS Compliance
Product Power MOSFET Modules
Vgs - Gate-Source Voltage 20 V
Mounting Type Style Screw Mount
Package Shape SOT-227-4
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Package Style Tube
Brand Microchip / Microsemi
Configuration Single
Fall Time 8 ns
Height 9.6 mm
Id - Continuous Drain Current 77 A
Length 38.2 mm
Number of Channels 1 Channel
Power Dissipation 568 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 30 mOhms
Rise Time 27 ns
Standard Pack Quantity 1
Product Group Discrete Semiconductor Modules
Material Silicon
Tradename ISOTOP
Transistor Polarity N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 18 ns
Vds - Drain-Source Breakdown Voltage 600 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Width 25.4 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 1.058219 oz
USHTS 8541290095
Products specifications
Manufacturer(MFG) Microchip
Part Category Discrete Semiconductor Modules
RoHS RoHS Compliance
Product Power MOSFET Modules
Vgs - Gate-Source Voltage 20 V
Mounting Type Style Screw Mount
Package Shape SOT-227-4
Operating Temperature(Min) - 55 C
Operating Temperature(Max) + 150 C
Package Style Tube
Brand Microchip / Microsemi
Configuration Single
Fall Time 8 ns
Height 9.6 mm
Id - Continuous Drain Current 77 A
Length 38.2 mm
Number of Channels 1 Channel
Power Dissipation 568 W
Product Type Discrete Semiconductor Modules
Rds On - Drain-Source Resistance 30 mOhms
Rise Time 27 ns
Standard Pack Quantity 1
Product Group Discrete Semiconductor Modules
Material Silicon
Tradename ISOTOP
Transistor Polarity N-Channel
Typical Turn-Off Delay Time 110 ns
Typical Turn-On Delay Time 18 ns
Vds - Drain-Source Breakdown Voltage 600 V
Vgs th - Gate-Source Threshold Voltage 2.1 V
Width 25.4 mm
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 1.058219 oz
USHTS 8541290095
Filters
Sort
display