A2T18S262W12NR3

Part Number: A2T18S262W12NR3

SKU: 141074

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V

Rohs State: Need to verify

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Availability: 44146 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	3.2 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Operating Frequency	1805 MHz to 1880 MHz
Gain	19.3 dB
Output Power	56 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	OM-880X-2
Package Style	Reel
Brand	NXP Semiconductors
Moisture Sensitive	Yes
Number of Channels	1 Channel
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
MACRO NEO Part Number	935346497528
TARIC	8541290000
ECCN	EAR99
Per Pcs Weight	0.133706 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	3.2 A
Vds - Drain-Source Breakdown Voltage	- 500 mV, 65 V
Operating Frequency	1805 MHz to 1880 MHz
Gain	19.3 dB
Output Power	56 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	OM-880X-2
Package Style	Reel
Brand	NXP Semiconductors
Moisture Sensitive	Yes
Number of Channels	1 Channel
Product Type	RF MOSFET Transistors
Standard Pack Quantity	250
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	- 6 V, 10 V
Vgs th - Gate-Source Threshold Voltage	1.4 V
MACRO NEO Part Number	935346497528
TARIC	8541290000
ECCN	EAR99
Per Pcs Weight	0.133706 oz
USHTS	8541290075

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