AFT18P350-4S2LR6

Part Number: AFT18P350-4S2LR6

SKU: 331927

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors AIRFAST 1.8-2.0GHZ C

Rohs State: Need to verify

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Availability: 16299 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	1 A
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1805 MHz to 1880 MHz
Gain	16.1 dB
Output Power	63 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-1230-4
Package Style	Reel
Brand	NXP Semiconductors
Configuration	Single
Product Type	RF MOSFET Transistors
Series	AFT18P350_4S2L
Standard Pack Quantity	150
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	1.2 V
Vgs th - Gate-Source Threshold Voltage	1.9 V
MACRO NEO Part Number	935317727128
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.300472 oz
USHTS	8541290075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
RoHS	RoHS Compliance
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	1 A
Vds - Drain-Source Breakdown Voltage	65 V
Operating Frequency	1805 MHz to 1880 MHz
Gain	16.1 dB
Output Power	63 W
Operating Temperature(Min)	- 40 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	NI-1230-4
Package Style	Reel
Brand	NXP Semiconductors
Configuration	Single
Product Type	RF MOSFET Transistors
Series	AFT18P350_4S2L
Standard Pack Quantity	150
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	1.2 V
Vgs th - Gate-Source Threshold Voltage	1.9 V
MACRO NEO Part Number	935317727128
CNHTS	8541290000
CAHTS	8541290000
JPHTS	8541290100
KRHTS	8541299000
TARIC	8541290000
MXHTS	85412999
ECCN	EAR99
Per Pcs Weight	0.300472 oz
USHTS	8541290075

AFT18P350-4S2LR6

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