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Part Number: AFT20P060-4NR3
SKU: 111382
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors AF1 2GHz 60W OM780-4
Rohs State: Need to verify
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Availability: 4144 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2 GHz
Gain 18.9 dB
Output Power 6.3 W
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 225 C
Mounting Type Style SMD/SMT
Package Shape OM-780-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Series AFT20P060_4N
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2 V
MACRO NEO Part Number 935311386528
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.108683 oz
USHTS 8541290075
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Vds - Drain-Source Breakdown Voltage 65 V
Operating Frequency 2 GHz
Gain 18.9 dB
Output Power 6.3 W
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 225 C
Mounting Type Style SMD/SMT
Package Shape OM-780-4
Package Style Reel
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Moisture Sensitive Yes
Product Type RF MOSFET Transistors
Series AFT20P060_4N
Standard Pack Quantity 250
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 2 V
MACRO NEO Part Number 935311386528
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.108683 oz
USHTS 8541290075
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