0
You have no items in your shopping cart.
Menu
Search
Wishlist 0
Shopping cart 0
Close
Menu

AFT27S010NT1

Part Number: AFT27S010NT1
SKU: 81075
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, .7-3.6GHz 1.26
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 76968 in stock
Delivery Date: 4-7 days
Call for pricing
Share
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 90 mA
Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V
Operating Frequency 100 MHz to 3.6 GHz
Gain 21.7 dB
Output Power 1.26 W
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5W
Package Style Reel
Brand NXP Semiconductors
Moisture Sensitive Yes
Number of Channels 1 Channel
Product Type RF MOSFET Transistors
Standard Pack Quantity 1000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
MACRO NEO Part Number 935317972515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
  • AFT27S010NT1 Price
  • AFT2 Series
  • AFT27S010NT1 Datasheet
  • AFT27S010NT1 Application
  • AFT27S010NT1 Pdf
  • AFT27S010NT1 Pinout
  • AFT27S010NT1 Image
  • AFT27S010NT1 Picture
  • AFT27S010NT1 In Stock
  • AFT27S010NT1 Distributor
  • AFT27S010NT1 RF MOSFET Transistors
  • AFT27S010NT1 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 90 mA
Vds - Drain-Source Breakdown Voltage - 500 mV, 65 V
Operating Frequency 100 MHz to 3.6 GHz
Gain 21.7 dB
Output Power 1.26 W
Operating Temperature(Min) - 40 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape PLD-1.5W
Package Style Reel
Brand NXP Semiconductors
Moisture Sensitive Yes
Number of Channels 1 Channel
Product Type RF MOSFET Transistors
Standard Pack Quantity 1000
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 10 V
Vgs th - Gate-Source Threshold Voltage 1.2 V
MACRO NEO Part Number 935317972515
CNHTS 8541290000
CAHTS 8541290000
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Per Pcs Weight 0.009877 oz
USHTS 8541290075
Information
My account
New products
Follow us
  • Rooms 1002,10/F.，Easey Commercial Building, Nos.253-261 Hennessy Road,Wanchai,HongKong.
  • +86-755-83299279
Copyright © 2024 Macro-Neo. All rights reserved.
Filters
Sort
display