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RF Transistors
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RF MOSFET Transistors
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BF1102,115
BF1102,115
Part Number:
BF1102,115
SKU:
283919
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Dual N-Channel 7V 40mA 200mW
Rohs State:
Need to verify
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Availability:
57635 in stock
Delivery Date:
4-7 days
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Specifications
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Products specifications
Manufacturer(MFG)
NXP
Part Category
RF MOSFET Transistors
RoHS
RoHS Compliance
Transistor Polarity
Dual N-Channel
Material
Silicon
Id - Continuous Drain Current
40 mA
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Rds On - Drain-Source Resistance
-
Mounting Type Style
SMD/SMT
Package Shape
SOT-363-6
Package Style
Reel
Brand
NXP Semiconductors
Configuration
Dual
Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Standard Pack Quantity
3000
Product Group
MOSFETs
Type
RF Small Signal MOSFET
Vgs - Gate-Source Voltage
15 V, 15 V
Vgs th - Gate-Source Threshold Voltage
1 V, 1.2 V
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.000212 oz
USHTS
8541210075
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RF MOSFET Transistors
BF1102,115
NXP Semiconductors
Products specifications
Manufacturer(MFG)
NXP
Part Category
RF MOSFET Transistors
RoHS
RoHS Compliance
Transistor Polarity
Dual N-Channel
Material
Silicon
Id - Continuous Drain Current
40 mA
Vds - Drain-Source Breakdown Voltage
7 V, 7 V
Rds On - Drain-Source Resistance
-
Mounting Type Style
SMD/SMT
Package Shape
SOT-363-6
Package Style
Reel
Brand
NXP Semiconductors
Configuration
Dual
Power Dissipation
200 mW
Product Type
RF MOSFET Transistors
Standard Pack Quantity
3000
Product Group
MOSFETs
Type
RF Small Signal MOSFET
Vgs - Gate-Source Voltage
15 V, 15 V
Vgs th - Gate-Source Threshold Voltage
1 V, 1.2 V
CNHTS
8541210000
CAHTS
8541210000
JPHTS
8541210101
TARIC
8541210000
MXHTS
85412101
ECCN
EAR99
Per Pcs Weight
0.000212 oz
USHTS
8541210075
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