BF1212R

Part Number: BF1212R

SKU: 20932

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors TAPE-7 MOS-RFSS

Rohs State: Need to verify

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Availability: 98401 in stock

Delivery Date: 4-7 days

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	30 A
Vds - Drain-Source Breakdown Voltage	6 V
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	SC-61B
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single Dual Gate
Fall Time	6 ns
Height	1 mm
Length	3 mm
Power Dissipation	180 mW
Product Type	RF MOSFET Transistors
Rise Time	15 ns
Standard Pack Quantity	3000
Product Group	MOSFETs
Type	RF Small Signal MOSFET
Vgs - Gate-Source Voltage	6 V
Width	1.4 mm
TARIC	8541210000
ECCN	EAR99
MACRO NEO Part Number	BF1212R,215
USHTS	8541210075

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	30 A
Vds - Drain-Source Breakdown Voltage	6 V
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Mounting Type Style	SMD/SMT
Package Shape	SC-61B
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single Dual Gate
Fall Time	6 ns
Height	1 mm
Length	3 mm
Power Dissipation	180 mW
Product Type	RF MOSFET Transistors
Rise Time	15 ns
Standard Pack Quantity	3000
Product Group	MOSFETs
Type	RF Small Signal MOSFET
Vgs - Gate-Source Voltage	6 V
Width	1.4 mm
TARIC	8541210000
ECCN	EAR99
MACRO NEO Part Number	BF1212R,215
USHTS	8541210075

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