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BF1216,115

Part Number: BF1216,115
SKU: 142185
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors Dual N-Channel 6V 30mA 180mW
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 8356 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity Dual N-Channel
Material Silicon
Id - Continuous Drain Current 30 mA
Vds - Drain-Source Breakdown Voltage 6 V, 6 V
Rds On - Drain-Source Resistance -
Mounting Type Style SMD/SMT
Package Shape SOT-143B-4
Package Style Reel
Brand NXP Semiconductors
Configuration Dual
Power Dissipation 180 mW
Product Type RF MOSFET Transistors
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1 V
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.000189 oz
USHTS 8541210075
  • BF1216,115 Price
  • BF12 Series
  • BF1216,115 Datasheet
  • BF1216,115 Application
  • BF1216,115 Pdf
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  • BF1216,115 In Stock
  • BF1216,115 Distributor
  • BF1216,115 RF MOSFET Transistors
  • BF1216,115 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity Dual N-Channel
Material Silicon
Id - Continuous Drain Current 30 mA
Vds - Drain-Source Breakdown Voltage 6 V, 6 V
Rds On - Drain-Source Resistance -
Mounting Type Style SMD/SMT
Package Shape SOT-143B-4
Package Style Reel
Brand NXP Semiconductors
Configuration Dual
Power Dissipation 180 mW
Product Type RF MOSFET Transistors
Standard Pack Quantity 3000
Product Group MOSFETs
Type RF Small Signal MOSFET
Vgs - Gate-Source Voltage 10 V, 10 V
Vgs th - Gate-Source Threshold Voltage 1 V
CNHTS 8541210000
CAHTS 8541210000
JPHTS 8541210101
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Per Pcs Weight 0.000189 oz
USHTS 8541210075
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