BLF4G10-120

Picture of BLF4G10-120

Part Number: BLF4G10-120

SKU: 30948

Manufacturer: NXP Semiconductors

Description: RF MOSFET Transistors

Rohs State: Need to verify

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Availability: 30158 in stock

Delivery Date: 4-7 days

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Specifications
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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	12 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	90 mOhms
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Package/Case	LDMOST-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Fall Time	25 ns
Height	4.72 mm
Length	20.02 mm
Product Type	RF MOSFET Transistors
Rise Time	88 ns
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	15 V
USHTS	8541290075
Width	9.91 mm
TARIC	8541290000

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Products specifications

Manufacturer(MFG)	NXP
Part Category	RF MOSFET Transistors
Transistor Polarity	N-Channel
Material	Silicon
Id - Continuous Drain Current	12 A
Vds - Drain-Source Breakdown Voltage	65 V
Rds On - Drain-Source Resistance	90 mOhms
Operating Temperature(Min)	- 65 C
Operating Temperature(Max)	+ 150 C
Package/Case	LDMOST-3
Package Style	Reel
Brand	NXP Semiconductors
Channel Mode	Enhancement
Configuration	Single
Fall Time	25 ns
Height	4.72 mm
Length	20.02 mm
Product Type	RF MOSFET Transistors
Rise Time	88 ns
Product Group	MOSFETs
Type	RF Power MOSFET
Vgs - Gate-Source Voltage	15 V
USHTS	8541290075
Width	9.91 mm
TARIC	8541290000

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