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BLF4G10LS-160

Part Number: BLF4G10LS-160
SKU: 152431
Manufacturer: NXP Semiconductors
Description: RF MOSFET Transistors LDMOS TNS
Rohs State: Need to verify
Free Sample Request: Request Free Samples
Availability: 7686 in stock
Delivery Date: 4-7 days
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Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 15 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 65 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape LDMOST-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.72 mm
Length 34.16 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 20
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 15 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF4G10LS-160,112
USHTS 8541290075
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  • BLF4G10LS-160 RF MOSFET Transistors
  • BLF4G10LS-160 NXP Semiconductors
Products specifications
Manufacturer(MFG) NXP
Part Category RF MOSFET Transistors
RoHS RoHS Compliance
Transistor Polarity N-Channel
Material Silicon
Id - Continuous Drain Current 15 A
Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 65 mOhms
Operating Temperature(Min) - 65 C
Operating Temperature(Max) + 150 C
Mounting Type Style SMD/SMT
Package Shape LDMOST-3
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Height 4.72 mm
Length 34.16 mm
Product Type RF MOSFET Transistors
Standard Pack Quantity 20
Product Group MOSFETs
Type RF Power MOSFET
Vgs - Gate-Source Voltage 15 V
Width 9.91 mm
CNHTS 8541290000
CAHTS 8541290000
TARIC 8541290000
ECCN EAR99
MACRO NEO Part Number BLF4G10LS-160,112
USHTS 8541290075
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